Japanese Scientists Extend Flash Memory Lifespan to Hundreds of Years

Scientists in Japan have worked out a new technique for improving the lifespan of flash memory devices from around a decade currently to hundreds of years. The new ferroelectric NAND flash technology can do rewrites 100 million times, versus the 10,000 or so of existing tech, and can be scaled down to 10nm—one third… »7/17/08 4:17am7/17/08 4:17am